Mitsubishi Electric And Nexperia To Partner In Joint Sic Power Semiconductors Development

By Author: Orson Amiri
Total Articles: 418
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Mitsubishi Electric Corporation (TOKYO: 6503) has partnered with Nexperia B.V. to co-create silicon carbide (SiC) power semiconductors. This collaboration aims to meet the rising demand, particularly in the electric vehicle sector, by utilizing SiC's advantages: reduced energy loss, elevated temperature tolerance, and faster switching speeds. Mitsubishi Electric's proficiency in wide-bandgap semiconductor technology will contribute SiC MOSFET chips to Nexperia for crafting SiC discrete devices. Mitsubishi Electric, with a strong foothold in high-speed trains, high-voltage industrial systems, and home appliances, previously introduced pioneering SiC power modules for air conditioners in 2010 and exclusively supplied an all-SiC power module for Shinkansen bullet trains in 2015. Their SiC power modules are recognized for advanced performance and reliability, promising significant contributions to global decarbonization efforts and the green transformation.

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